Add to ORKGMinority electron properties in p+‐GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+‐GaAs doped to ∼1019 cm−3 with Be‐ and C‐dopants. Zero‐field time‐of‐flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields Ln=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be‐ and C‐doped material
This thesis is concerned with the effects of heavy impurity doping on band structure and minority ca...
The effects of degenerate Fermi statistics on electron injection currents for p+‐GaAs grown by molec...
The photogenerated carrier-induced band-edge modifications of beryllium single δ-doped GaAs layers c...
The variation of minority electron mobility with doping density in p+-GaAs has been measured with th...
Minority carrier diffusivity, or equivalently mobility, is an important transport parameter that det...
Heavily doped p-type GaAs is important for both optical and electronic devices, and recently carbon ...
The minority hole diffusivity, or equivalently the hole mobility, was measured in n+GaAs with the ze...
The electrical performance of Be‐doped, p‐p+ GaAs homojunction barriers is characterized and analyze...
Minority electron diffusivities in p+-GaAs-doped NA =~1.4×1018 and ~1019 cm-3 have been measured in ...
Measured minority and majority carrier mobility temperature dependencies in heavily doped n- and p-G...
Carbon-doped GaAs with carbon concentrations ranging from 2~ 1Ol7 cmW3 to 2.6~ 102' cm -' ...
We summarize the room‐temperature minority‐carrier mobility, minority‐carrier lifetime, and effectiv...
We present experimental evidence that minority electron transport across a thin, quasineutral p+ GaA...
Measurements of electron currents injected into p+‐GaAs are presented for molecular beam epitaxially...
[[abstract]]Carbon is a promising p-type dopant in GaAs/AlxGa1−xAs heterojunction bipolar transistor...
This thesis is concerned with the effects of heavy impurity doping on band structure and minority ca...
The effects of degenerate Fermi statistics on electron injection currents for p+‐GaAs grown by molec...
The photogenerated carrier-induced band-edge modifications of beryllium single δ-doped GaAs layers c...
The variation of minority electron mobility with doping density in p+-GaAs has been measured with th...
Minority carrier diffusivity, or equivalently mobility, is an important transport parameter that det...
Heavily doped p-type GaAs is important for both optical and electronic devices, and recently carbon ...
The minority hole diffusivity, or equivalently the hole mobility, was measured in n+GaAs with the ze...
The electrical performance of Be‐doped, p‐p+ GaAs homojunction barriers is characterized and analyze...
Minority electron diffusivities in p+-GaAs-doped NA =~1.4×1018 and ~1019 cm-3 have been measured in ...
Measured minority and majority carrier mobility temperature dependencies in heavily doped n- and p-G...
Carbon-doped GaAs with carbon concentrations ranging from 2~ 1Ol7 cmW3 to 2.6~ 102' cm -' ...
We summarize the room‐temperature minority‐carrier mobility, minority‐carrier lifetime, and effectiv...
We present experimental evidence that minority electron transport across a thin, quasineutral p+ GaA...
Measurements of electron currents injected into p+‐GaAs are presented for molecular beam epitaxially...
[[abstract]]Carbon is a promising p-type dopant in GaAs/AlxGa1−xAs heterojunction bipolar transistor...
This thesis is concerned with the effects of heavy impurity doping on band structure and minority ca...
The effects of degenerate Fermi statistics on electron injection currents for p+‐GaAs grown by molec...
The photogenerated carrier-induced band-edge modifications of beryllium single δ-doped GaAs layers c...