Add to ORKGThe quality of pn junction photodetectors made of Al0.2Ga0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cellsfabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material
AbstractAl0.2Ga0.8As photovoltaic solar cells have been monolithically grown on silicon substrates b...
In this thesis, MBE and micro fabrication processes are used to fabricate 1×1cm^2 single junction ho...
Al0.2Ga0.8As photovoltaic solar cells have been monolithically grown on silicon substrates by Molecu...
The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of h...
Progress towards achieving a high one-sun air mass 0 (AM0) efficiency in a monolithic dual junction ...
Epitaxial growth of III-V materials on silicon (Si) presents an elegant pathway in order to develop ...
High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with are...
This project’s objective is to improve our fundamental understanding of the generation, recombinatio...
High performance narrow-bandgap GaInNAsSb solar cells are instrumental for the development of lattic...
International audienceWe report on AlGaAs-based heterojunction solar cells grown by solid source mol...
The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-devel...
A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means...
GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high...
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabr...
Here we demonstrate a more effective use of III–V photoconversion material to achieve an ultrahigh p...
AbstractAl0.2Ga0.8As photovoltaic solar cells have been monolithically grown on silicon substrates b...
In this thesis, MBE and micro fabrication processes are used to fabricate 1×1cm^2 single junction ho...
Al0.2Ga0.8As photovoltaic solar cells have been monolithically grown on silicon substrates by Molecu...
The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of h...
Progress towards achieving a high one-sun air mass 0 (AM0) efficiency in a monolithic dual junction ...
Epitaxial growth of III-V materials on silicon (Si) presents an elegant pathway in order to develop ...
High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with are...
This project’s objective is to improve our fundamental understanding of the generation, recombinatio...
High performance narrow-bandgap GaInNAsSb solar cells are instrumental for the development of lattic...
International audienceWe report on AlGaAs-based heterojunction solar cells grown by solid source mol...
The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-devel...
A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means...
GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high...
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabr...
Here we demonstrate a more effective use of III–V photoconversion material to achieve an ultrahigh p...
AbstractAl0.2Ga0.8As photovoltaic solar cells have been monolithically grown on silicon substrates b...
In this thesis, MBE and micro fabrication processes are used to fabricate 1×1cm^2 single junction ho...
Al0.2Ga0.8As photovoltaic solar cells have been monolithically grown on silicon substrates by Molecu...