Add to ORKGChannel length of metal oxide semiconductor field effect transistors (MOSFETs) are scaling below 20 nm. At this scale, quantum mechanical effects, including source to drain tunneling and quantum confinement play an increasingly important role in predicting device performance. Accurate projections of device characteristics are of high interest in the semiconductor industry. This work presents a semi-empirical model based quantum transport tool, which is used for accurately predicting the performance of double gate MOSFETs over the next 15 years as part of the International Technology Roadmap for Semiconductors (ITRS). The results show ON-current and performance degradation as a result of source to drain (SD) tunneling, and band structure alt...
The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanic...
textIn accordance with Moore’s law, MOSFETs have been rapidly scaled down for the past thirty years...
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the qua...
This thesis describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mec...
Channel length of metal oxide semiconductor field effect transistors (MOSFETs) are scaling below 20 ...
In the past twenty years, the channel length of metal-oxide-semiconductor field-effect transistors (...
The desire to reduce the power consumption of consumer electronics has driven the semiconductor indu...
This paper covers the fundamentals of SDGFETs and ADGFETs. Drain modern fashions for unmarried gate ...
In this thesis, we explore the performance characteristics, speci cally the drain current drive, of ...
Scaling of Silicon and InGaAs MOSFETs of a 25 nm gate length till shortest gate length of 5 nm, simu...
This thesis deals with the characterization and analytical or semi-analytical modeling of the effect...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...
This thesis deals with the characterization and analytical or semi-analytical modeling of the effect...
The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanic...
textIn accordance with Moore’s law, MOSFETs have been rapidly scaled down for the past thirty years...
The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanic...
textIn accordance with Moore’s law, MOSFETs have been rapidly scaled down for the past thirty years...
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the qua...
This thesis describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mec...
Channel length of metal oxide semiconductor field effect transistors (MOSFETs) are scaling below 20 ...
In the past twenty years, the channel length of metal-oxide-semiconductor field-effect transistors (...
The desire to reduce the power consumption of consumer electronics has driven the semiconductor indu...
This paper covers the fundamentals of SDGFETs and ADGFETs. Drain modern fashions for unmarried gate ...
In this thesis, we explore the performance characteristics, speci cally the drain current drive, of ...
Scaling of Silicon and InGaAs MOSFETs of a 25 nm gate length till shortest gate length of 5 nm, simu...
This thesis deals with the characterization and analytical or semi-analytical modeling of the effect...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...
This thesis deals with the characterization and analytical or semi-analytical modeling of the effect...
The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanic...
textIn accordance with Moore’s law, MOSFETs have been rapidly scaled down for the past thirty years...
The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanic...
textIn accordance with Moore’s law, MOSFETs have been rapidly scaled down for the past thirty years...
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the qua...