The occurrence of voltage noise in digital circuits has been typically associated to logic errors. The noise exposure of nano-scale circuits, associated to process variability, makes it interesting to explore the impact of input noise voltage pulses on the static power of idle logic cells, even if the logic operation is not compromised. This work proposes a simple yet effective characterization model to characterize the resulting shift in static energy consumption. The characterization scheme allows a fast calculation of the statistical distribution of the energy shift in digital cells affected by random noise pulses, also considering process variations. The accuracy of the approach has been tested against SPICE simulation, reaching 104 spe...
Simultaneous switching noise (SSN) resulting from IC devices can result in significant power bus noi...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static no...
Current nanometric IC processes need to assess the robustness of memories under any possible source ...
Switching noise is one of the major sources of timing errors and functional hazards in logic circuit...
Switching activity of logic gates in a digital system is a deterministic process, depending on both ...
In fully CMOS digital integrated systems, switching activity of logic gates is the source of the so-...
Switching of logic gates in integrated circuits is responsible for significant power supply noise on...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static n...
Thesis (Ph. D.)--University of Rochester. Dept. of Electrical and Computer Engineering, 2009.Continu...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
Voltage variations are a major challenge in processor design. Here, researchers characterize the vol...
Simultaneous switching noise (SSN) resulting from IC devices can result in significant power bus noi...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static no...
Current nanometric IC processes need to assess the robustness of memories under any possible source ...
Switching noise is one of the major sources of timing errors and functional hazards in logic circuit...
Switching activity of logic gates in a digital system is a deterministic process, depending on both ...
In fully CMOS digital integrated systems, switching activity of logic gates is the source of the so-...
Switching of logic gates in integrated circuits is responsible for significant power supply noise on...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static n...
Thesis (Ph. D.)--University of Rochester. Dept. of Electrical and Computer Engineering, 2009.Continu...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
Voltage variations are a major challenge in processor design. Here, researchers characterize the vol...
Simultaneous switching noise (SSN) resulting from IC devices can result in significant power bus noi...
session B2L-C: Variability and RTN CharacterizationInternational audienceThe lack of dynamic stabili...
ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static no...