Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors
- Gluschke, J.G.
- Seidl, J.
- Lyttleton, Roman
- Carrad, D.J.
- Cochrane, J.W.
- Lehmann, Sebastian
- Samuelson, Lars
- Micholich, A.P.
DOIAbstract
We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III–V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 103 ...
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