In phase-change memory devices, a material is cycled between glassy and crystalline states. The highly temperature-dependent kinetics of its crystallization process enables application in memory technology, but the transition has not been resolved on an atomic scale. Using femtosecond x-ray diffraction and ab initio computer simulations, we determined the time-dependent pair-correlation function of phase-change materials throughout the melt-quenching and crystallization process. We found a liquid–liquid phase transition in the phase-change materials Ag4In3Sb67Te26 and Ge15Sb85 at 660 and 610 kelvin, respectively. The transition is predominantly caused by the onset of Peierls distortions, the amplitude of which correlates with an increase of...
Phase-change materials exhibit fast and reversible transitions between an amorphous and a crystallin...
Phase change materials are of great interest as active layers in rewritable optical disks and novel ...
Phase-change materials are the basis for next-generation memory devices and reconfigurable electroni...
In phase-change memory devices, a material is cycled between glassy and crystalline states. The high...
Glass-forming materials are employed in information storage technologies making use of the transitio...
Controlling crystallization kinetics is key to overcome the temperature–time dilemma in phase change...
Chalcogenide phase-change materials combine a remarkable set of properties that makes them promising...
Glass-forming materials are employed in information storage technologies making use of the transitio...
After a general definition of phase change materials and a description of their defining properties,...
Phase change memory devices are based on the rapid and reversible amorphous to crystalline transfor...
Thanks to their outstanding physical properties, phase-change materials (PCM) are considered as one ...
Phase change materials are widely considered for application in nonvolatile memories because of thei...
Phase-change random-access memory relies on the reversible crystalline-glassy phase change in chalco...
Phase-change random-access memory relies on the reversible crystalline-glassy phase change in chalco...
Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization ...
Phase-change materials exhibit fast and reversible transitions between an amorphous and a crystallin...
Phase change materials are of great interest as active layers in rewritable optical disks and novel ...
Phase-change materials are the basis for next-generation memory devices and reconfigurable electroni...
In phase-change memory devices, a material is cycled between glassy and crystalline states. The high...
Glass-forming materials are employed in information storage technologies making use of the transitio...
Controlling crystallization kinetics is key to overcome the temperature–time dilemma in phase change...
Chalcogenide phase-change materials combine a remarkable set of properties that makes them promising...
Glass-forming materials are employed in information storage technologies making use of the transitio...
After a general definition of phase change materials and a description of their defining properties,...
Phase change memory devices are based on the rapid and reversible amorphous to crystalline transfor...
Thanks to their outstanding physical properties, phase-change materials (PCM) are considered as one ...
Phase change materials are widely considered for application in nonvolatile memories because of thei...
Phase-change random-access memory relies on the reversible crystalline-glassy phase change in chalco...
Phase-change random-access memory relies on the reversible crystalline-glassy phase change in chalco...
Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization ...
Phase-change materials exhibit fast and reversible transitions between an amorphous and a crystallin...
Phase change materials are of great interest as active layers in rewritable optical disks and novel ...
Phase-change materials are the basis for next-generation memory devices and reconfigurable electroni...