International audienceWe propose to use a Ge-dielectric-metal stacking to allow one to address both thermal management with the metal as an efficient heat sink and tensile strain engineering with the buried dielectric as a stressor layer. This scheme is particularly useful for the development of Ge-based optical sources. We demonstrate experimentally the relevance of this approach by comparing the optical response of tensile-strained Ge microdisks with an Al heat sink or an oxide pedestal. Photoluminescence indicates a much reduced temperature rise in the microdisk (16 K with Al pedestal against 200 K with SiO 2 pedestal under a 9 mW continuous wave optical pumping). An excellent agreement is found with finite element modeling of the temper...
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are gen...
Highly strained Ge micro-cavities are demonstrated, with biaxial equivalent tensile strains > 2 ...
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of el...
Strain engineering is a powerful approach in micro- and optoelectronics to enhance carrier mobility,...
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor-compatible, tunable...
Realizing a germanium (Ge)-based monolithic light source requires n-type doping with high activation...
Tensile strain is required to enhance light-emitting direct-gap recombinations in germanium (Ge), wh...
Ge is considered to be one of the most promising materials for realizing full monolithic integration...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
GeSn alloys are promising candidates for complementary metal-oxide- semiconductor-compatible, tunabl...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, th...
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are gen...
Highly strained Ge micro-cavities are demonstrated, with biaxial equivalent tensile strains > 2 ...
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of el...
Strain engineering is a powerful approach in micro- and optoelectronics to enhance carrier mobility,...
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor-compatible, tunable...
Realizing a germanium (Ge)-based monolithic light source requires n-type doping with high activation...
Tensile strain is required to enhance light-emitting direct-gap recombinations in germanium (Ge), wh...
Ge is considered to be one of the most promising materials for realizing full monolithic integration...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
GeSn alloys are promising candidates for complementary metal-oxide- semiconductor-compatible, tunabl...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
The monolithic integration of photonic functionality into silicon microtechnology is widely advanced...
Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, th...
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are gen...
Highly strained Ge micro-cavities are demonstrated, with biaxial equivalent tensile strains > 2 ...
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of el...