In 1932 Hecht obtained his famous equation concerning the charge induced on the plates of a planar radiation detector in the presence of a uniform electric field. It is well known that in many cases, due to non-ohmic contacts or, in any case, in the presence of spatial charge, the internal electric field is no longer constant, so this formula could lead to wrong conclusions. In this article the authors examine the common case of an electric field decreasing linearly along the detector thickness. This is a very interesting case because this shape of field is fairly widespread in the presence of diffused spatial charge and the functional dependence of the collected charge on varying the applied bias, in some cases, is similar to the Hecht ...
The distribution of the electric field and its spatial extent are key predictors of the charge colle...
In this work a numerical approach has been used to investigate some properties of semi-insulating Ga...
We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe wi...
II–VI semiconductors obtain a real interest in the scientific community for their wide applications ...
Charge collection efficiency and material transport properties in CdTe and CZT planar devices for X ...
The interpretation of experimental data and predictions for future experiments for high-energy physi...
In this report we discuss static and time dependent electric fields in detector geometries with an a...
The behavior of the electric field and the charge-density distribution in semi-insulating gallium ar...
CdTe detectors performances are limited by trapping of carriers in crystal defects and an accurate e...
The physical behavior of electrode contacts and their technology is an active field of interest in r...
A semiconductor with a high resistivity due to a deep trap is called a semi-insulator. A semi-insula...
The electric field distribution inside heavily irradiated silicon particle detectors is deduced usin...
The effect on the operation of a vacuum diode of a spatially varying distribution of free electrons,...
Abstract Ion beam induced charge collection (IBIC) is a powerful experimental technique to charact...
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection...
The distribution of the electric field and its spatial extent are key predictors of the charge colle...
In this work a numerical approach has been used to investigate some properties of semi-insulating Ga...
We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe wi...
II–VI semiconductors obtain a real interest in the scientific community for their wide applications ...
Charge collection efficiency and material transport properties in CdTe and CZT planar devices for X ...
The interpretation of experimental data and predictions for future experiments for high-energy physi...
In this report we discuss static and time dependent electric fields in detector geometries with an a...
The behavior of the electric field and the charge-density distribution in semi-insulating gallium ar...
CdTe detectors performances are limited by trapping of carriers in crystal defects and an accurate e...
The physical behavior of electrode contacts and their technology is an active field of interest in r...
A semiconductor with a high resistivity due to a deep trap is called a semi-insulator. A semi-insula...
The electric field distribution inside heavily irradiated silicon particle detectors is deduced usin...
The effect on the operation of a vacuum diode of a spatially varying distribution of free electrons,...
Abstract Ion beam induced charge collection (IBIC) is a powerful experimental technique to charact...
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection...
The distribution of the electric field and its spatial extent are key predictors of the charge colle...
In this work a numerical approach has been used to investigate some properties of semi-insulating Ga...
We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe wi...