High efficiency Cu(In,Ga)Se2/CdS thin film solar cells obtained with precursors sputtered from InSe, GaSe and Cu targets

16.2% efficient Cu(In,Ga)Se2/CdS solar cells were prepared with a process which uses only sputtering and selenization. InSe, GaSe and Cu sputtering targets were used for the preparation of precursors. Selenization was done in a vacuum chamber in which pure Se is evaporated from a graphite crucible. CdS was deposited by sputtering in an atmosphere of Ar containing 3% of CHF3. The process is highly reproducible and it is easily scalable to much larger area substrates. © 2012 Elsevier B.V. All rights reserved