The reliability of press-packed IGBTs strongly depends on the solutions adopted in terms of heat dissipation and thermo-mechanical stress management so as to guarantee satisfactory electrical and thermal contact conditions throughout the service life. In this paper, two aspects concerning the design process of a single-chip press-pack IGBT are outlined: i) cyclic stresses and strains occurring in the package and in the chip are discussed on the basis of finite element (FE) simulations, ii) a testing rig developed for accelerated testing of single IGBT chips under controlled contact pressure conditions is presented
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
The IGBT press-pack provides low inductance and simple module stack for high power and high voltage ...
This paper details a modeling and experimental assessment of the packaging process for a silicon car...
Product development in the power electronic industry is characterized by short time-to-market and hi...
Press-pack IGBTs are increasing their market-share, especially for traction applications. As packagi...
The reliability of press-packed insulated gate bipolar transistors (IGBTs) depends on satisfactory c...
Product development in the power electronic industry is characterized by the short time-tomarket and...
The reliability of press-packed integrated gate bipolar transistors (IGBT) depends on satisfactory c...
In this study stresses and strains in a press-packed integrated gate bipolar transistor (IGBT) due t...
Press-pack Insulated Gate Bipolar Transistors (PP IGBT) are becoming increasingly used in HVDC and F...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...
In this paper, a FEM (finite element method) based mechanical model for PP (press-pack) IGBTs (insul...
In this thesis the power cycling capability of individual press-pack IGBT chips is investigated. Pre...
On the basis of the development and application requirements of flexible DC transmission techniques,...
Press Pack Insulated Gate Bipolar Transistors (PP- IGBTs) are commonly connected in series and stack...
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
The IGBT press-pack provides low inductance and simple module stack for high power and high voltage ...
This paper details a modeling and experimental assessment of the packaging process for a silicon car...
Product development in the power electronic industry is characterized by short time-to-market and hi...
Press-pack IGBTs are increasing their market-share, especially for traction applications. As packagi...
The reliability of press-packed insulated gate bipolar transistors (IGBTs) depends on satisfactory c...
Product development in the power electronic industry is characterized by the short time-tomarket and...
The reliability of press-packed integrated gate bipolar transistors (IGBT) depends on satisfactory c...
In this study stresses and strains in a press-packed integrated gate bipolar transistor (IGBT) due t...
Press-pack Insulated Gate Bipolar Transistors (PP IGBT) are becoming increasingly used in HVDC and F...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...
In this paper, a FEM (finite element method) based mechanical model for PP (press-pack) IGBTs (insul...
In this thesis the power cycling capability of individual press-pack IGBT chips is investigated. Pre...
On the basis of the development and application requirements of flexible DC transmission techniques,...
Press Pack Insulated Gate Bipolar Transistors (PP- IGBTs) are commonly connected in series and stack...
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
The IGBT press-pack provides low inductance and simple module stack for high power and high voltage ...
This paper details a modeling and experimental assessment of the packaging process for a silicon car...