We present a bond-charge-model slab calculation for the surface dynamics of GaAs(110), which represents an example of an open surface with unsaturated dangling bands. The comparison to previously reported and some new He inelastic-scattering data for the low-frequency region provides information on the surface geometry
Steps on GaAs(110) surfaces, with step-normal vectors parallel to [001], are studied by scanning tun...
Scanning tunneling microscopy and spectroscopy measurements on the GaAs(110) surface with complement...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
Results are presented of a new calculation of the surface states at the (110) surface of GaAs. By us...
Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-75-C-13...
The recent application to the semiconductor surfaces of the powerful ab-initio molecular dynamics (C...
The electronic structure of the (110) face of GaAs, GaP and InSb is investigated using a realistic t...
We have studied the reconstruction of the (110) surface of various III–V semiconductor compounds (Ga...
Angle-resolved photoemission and inverse photoemission spectroscopy have been applied to investigate...
The investigation of non-polar III-V semiconductor surfaces by cross-section scanning tunneling micr...
Abstract: We present results of finite-temperature Car-Parrinello molecular dynamics simulations of ...
We have generated, using an ab initio pseudopotential method and the Bardeen transfer Hamiltonian ap...
We present results of finite-temperature Car-Parrinello molecular dynamics simulations of the atomic...
The main aim of this thesis is to study and understand the surface electronic structure of compound ...
We present structural and dynamical properties of the As covered GaAs(1 1 0) surface based on ab ini...
Steps on GaAs(110) surfaces, with step-normal vectors parallel to [001], are studied by scanning tun...
Scanning tunneling microscopy and spectroscopy measurements on the GaAs(110) surface with complement...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
Results are presented of a new calculation of the surface states at the (110) surface of GaAs. By us...
Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-75-C-13...
The recent application to the semiconductor surfaces of the powerful ab-initio molecular dynamics (C...
The electronic structure of the (110) face of GaAs, GaP and InSb is investigated using a realistic t...
We have studied the reconstruction of the (110) surface of various III–V semiconductor compounds (Ga...
Angle-resolved photoemission and inverse photoemission spectroscopy have been applied to investigate...
The investigation of non-polar III-V semiconductor surfaces by cross-section scanning tunneling micr...
Abstract: We present results of finite-temperature Car-Parrinello molecular dynamics simulations of ...
We have generated, using an ab initio pseudopotential method and the Bardeen transfer Hamiltonian ap...
We present results of finite-temperature Car-Parrinello molecular dynamics simulations of the atomic...
The main aim of this thesis is to study and understand the surface electronic structure of compound ...
We present structural and dynamical properties of the As covered GaAs(1 1 0) surface based on ab ini...
Steps on GaAs(110) surfaces, with step-normal vectors parallel to [001], are studied by scanning tun...
Scanning tunneling microscopy and spectroscopy measurements on the GaAs(110) surface with complement...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...