Add to ORKGThis work gives an overview of the main effects and reliability issues connected with high drain voltage conditions in microwave FETs. It also presents a comprehensive set of techniques and experiments for the characterization and investigation of the effects of hot electron and impact ionization conditions in microwave power devices, taking as a test vehicle Ku-band AlGaAs/GaAs power HFETs
We present the first data on rapid degradation of electrical characteristics induced by hot electron...
This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs...
A unified study on the hot carrier reliability and the effect of temperature on the pseudomorphic hi...
High-field reliability issues connected with hot electron and impact ionization are typically the re...
High-field reliability issues connected with hot electron and impact ionization are typically the re...
The work reports on hot electron reliability of 0.25 micron Al(0.25)Ga(0.75)As/In(0.2)Ga(0.8)As/GaAs...
This work reports on hot electron reliability of 0.25 μm Alo.25−Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs fr...
This work reports on hot electron stress experiments performed on SiN passivated AlGaAs/InGaAs/ GaAs...
This paper reports on hot electron (HE) degradation of 0.25-\u3bcm Al0.25Ga0.75As/In0.2Ga0.8 As/GaAs...
This work for the first time describes the results of hot electron stress experiments performed on I...
The technology of III-V FETs is nowadays mature, and traditional wear-out mechanisms are no longer a...
We present in this work the rapid and irreversible degradation of electrical characteristics induced...
This paper reviews results of a study concerning the effects of hot electrons on the degradation of ...
The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high elec...
We report on the degradation induced by hot electrons when AlGaAs/GaAs HEMTS are biased at high drai...
We present the first data on rapid degradation of electrical characteristics induced by hot electron...
This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs...
A unified study on the hot carrier reliability and the effect of temperature on the pseudomorphic hi...
High-field reliability issues connected with hot electron and impact ionization are typically the re...
High-field reliability issues connected with hot electron and impact ionization are typically the re...
The work reports on hot electron reliability of 0.25 micron Al(0.25)Ga(0.75)As/In(0.2)Ga(0.8)As/GaAs...
This work reports on hot electron reliability of 0.25 μm Alo.25−Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs fr...
This work reports on hot electron stress experiments performed on SiN passivated AlGaAs/InGaAs/ GaAs...
This paper reports on hot electron (HE) degradation of 0.25-\u3bcm Al0.25Ga0.75As/In0.2Ga0.8 As/GaAs...
This work for the first time describes the results of hot electron stress experiments performed on I...
The technology of III-V FETs is nowadays mature, and traditional wear-out mechanisms are no longer a...
We present in this work the rapid and irreversible degradation of electrical characteristics induced...
This paper reviews results of a study concerning the effects of hot electrons on the degradation of ...
The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high elec...
We report on the degradation induced by hot electrons when AlGaAs/GaAs HEMTS are biased at high drai...
We present the first data on rapid degradation of electrical characteristics induced by hot electron...
This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs...
A unified study on the hot carrier reliability and the effect of temperature on the pseudomorphic hi...