Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances

This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/GaN HEMTs, in terms of: (1) thermal resistance; (2) ohmic series resistance (at low drain bias). In spite of their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations