We present a study on the time evolution of the electroluminescence(EL)spectra of AlGaN-based deep ultraviolet light-emitting diodes(LEDs) under pulsed current pumping. The ELspectra peaks at 285 nm and 330 nm are found to result from recombination involving band-to-band and free carriers to deep acceptor level transitions. The 330 nm long-wavelength transitions to deep acceptor levels in the p-AlGaN layer as well as the nonradiative processes significantly influence the LED internal quantum efficiency
We studied time-resolvedphotoluminescence(PL) over a temporal range 10−6–103 s in high-purity freest...
Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The sam...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
We present a study on the time evolution of the electroluminescence(EL)spectra of AlGaN-based deep u...
We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet...
We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sap...
This paper analyzes the performance and reliability of deep-ultraviolet light-emitting diodes (LEDs)...
Time-resolvedphotoluminescence(PL)dynamics has been studied in AlInGaN/AlInGaN multiple quantum well...
Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under e...
This paper analyzes the performance and reliability of deep-ultraviolet light-emitting diodes (LEDs)...
In this paper, current-dependent emission spectra and efficiency measured on the same AlGaInP red li...
AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) have a wide variety of potential application...
Operation of InGaNmultiple-quantum-well(MQW)light-emitting diodes(LEDs) with quaternary AlInGaN barr...
Deep level defects responsible for the 2.4 eV photoluminescence (PL) band in a freestanding GaN temp...
The development of ultraviolet AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) in the...
We studied time-resolvedphotoluminescence(PL) over a temporal range 10−6–103 s in high-purity freest...
Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The sam...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
We present a study on the time evolution of the electroluminescence(EL)spectra of AlGaN-based deep u...
We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet...
We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sap...
This paper analyzes the performance and reliability of deep-ultraviolet light-emitting diodes (LEDs)...
Time-resolvedphotoluminescence(PL)dynamics has been studied in AlInGaN/AlInGaN multiple quantum well...
Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under e...
This paper analyzes the performance and reliability of deep-ultraviolet light-emitting diodes (LEDs)...
In this paper, current-dependent emission spectra and efficiency measured on the same AlGaInP red li...
AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) have a wide variety of potential application...
Operation of InGaNmultiple-quantum-well(MQW)light-emitting diodes(LEDs) with quaternary AlInGaN barr...
Deep level defects responsible for the 2.4 eV photoluminescence (PL) band in a freestanding GaN temp...
The development of ultraviolet AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) in the...
We studied time-resolvedphotoluminescence(PL) over a temporal range 10−6–103 s in high-purity freest...
Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The sam...
This article may be downloaded for personal use only. Any other use requires prior permission of the...