Add to ORKGWe report on the performance of AlGaN/GaN/AlN heterostructurefield-effect transistors(HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors
Gallium nitride (GaN) based technology has been heavily researched over the past two decades due to ...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.The fabrication of AlGaN/GaN ...
Due to large polarization effects, two-dimensional electron gas (2DEG) concentrations higher than 1x...
We report on the performance of AlGaN/GaN/AlN heterostructurefield-effect transistors(HFETs) grown o...
We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricate...
We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostruct...
We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs)...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We demonstrate that 3.5% in-plane lattice mismatch between GaN (0001) epitaxial layers and SiC (0001...
The research described in this thesis has been carried out within a joint project between the Radbou...
The strong spontaneous and piezoelectric polarizations in pseudomorphic AlGaN/GaN on SiC substrates ...
We propose and demonstrate an AlGaN/GaN/AlGaN double heterostructure (DH) with significantly improve...
Microwave power transistors made of conventional semiconductors have already approached their perfor...
We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with...
A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and S...
Gallium nitride (GaN) based technology has been heavily researched over the past two decades due to ...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.The fabrication of AlGaN/GaN ...
Due to large polarization effects, two-dimensional electron gas (2DEG) concentrations higher than 1x...
We report on the performance of AlGaN/GaN/AlN heterostructurefield-effect transistors(HFETs) grown o...
We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricate...
We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostruct...
We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs)...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We demonstrate that 3.5% in-plane lattice mismatch between GaN (0001) epitaxial layers and SiC (0001...
The research described in this thesis has been carried out within a joint project between the Radbou...
The strong spontaneous and piezoelectric polarizations in pseudomorphic AlGaN/GaN on SiC substrates ...
We propose and demonstrate an AlGaN/GaN/AlGaN double heterostructure (DH) with significantly improve...
Microwave power transistors made of conventional semiconductors have already approached their perfor...
We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with...
A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and S...
Gallium nitride (GaN) based technology has been heavily researched over the past two decades due to ...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.The fabrication of AlGaN/GaN ...
Due to large polarization effects, two-dimensional electron gas (2DEG) concentrations higher than 1x...