Add to ORKGThe realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time. © 2004 IEEE
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridg...
The solidus lines of PbTe have not been accurately predicted. Large uncertainties about the intrinsi...
[[abstract]]Some investigations are presented on the p-type conduction of CdTe single crystals. A mo...
For phase change random access memory (PCRAM) cells, it is important to know the contact resistance ...
The interaction between CdTe and In during the formation of an ohmic contact has been investigated. ...
Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for...
A barrier-free back contact in CdTe/CdS solar cells is fundamental for obtaining high-efficiency dev...
Sb layers on chemically etched n-CdTe provide noise-free electrical contacts suitable for various el...
Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevapora...
We have investigated the interfacial contact properties of the CMOS compatible electrode materials W...
Contact electrical resistance is a critical issue to be addressed in thermoelectric modules. A comme...
High electrical contact resistance refrains the performance of thin-film thermoelectric devices at t...
Because of the high value of its work function (qΦm ∼ 5.9 eV), the semimetallic compound HgTe has be...
Electrodeposition is chosen for preparation of the back contact for CdS/CdTe thin film solar cells b...
[[abstract]]Some investigations are presented on the p-type conduction of CdTe single crystals. A mo...
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridg...
The solidus lines of PbTe have not been accurately predicted. Large uncertainties about the intrinsi...
[[abstract]]Some investigations are presented on the p-type conduction of CdTe single crystals. A mo...
For phase change random access memory (PCRAM) cells, it is important to know the contact resistance ...
The interaction between CdTe and In during the formation of an ohmic contact has been investigated. ...
Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for...
A barrier-free back contact in CdTe/CdS solar cells is fundamental for obtaining high-efficiency dev...
Sb layers on chemically etched n-CdTe provide noise-free electrical contacts suitable for various el...
Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevapora...
We have investigated the interfacial contact properties of the CMOS compatible electrode materials W...
Contact electrical resistance is a critical issue to be addressed in thermoelectric modules. A comme...
High electrical contact resistance refrains the performance of thin-film thermoelectric devices at t...
Because of the high value of its work function (qΦm ∼ 5.9 eV), the semimetallic compound HgTe has be...
Electrodeposition is chosen for preparation of the back contact for CdS/CdTe thin film solar cells b...
[[abstract]]Some investigations are presented on the p-type conduction of CdTe single crystals. A mo...
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridg...
The solidus lines of PbTe have not been accurately predicted. Large uncertainties about the intrinsi...
[[abstract]]Some investigations are presented on the p-type conduction of CdTe single crystals. A mo...