This paper reports a CMOS distributed amplifier which operates from 1-27 GHz. This amplifier exhibits a measured gain of 6 dB and uses coplanar waveguides to implement required inductances. Power consumption is 68.1 mW while driven from a 3.3V supply but it can operate with supply voltages as low as 1.8V. Chip area is 1.8 × 0.9 mm. To the author's knowledge this is the fastest frequency of operation ever reported for a distributed amplifier implemented in a standard CMOS technology
This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical c...
[[abstract]]A 3-10 GHz CMOS distributed amplifier (DA) with. at and low noise figure (NF) and. at an...
This book describes methods to design distributed amplifiers useful for performing circuit functions...
Distributed amplifiers were fabricated successfully with a gain of 8 dB plusminus 1 dB in the freque...
A four-stage distributed amplifier utilizing low-loss slow-wave shielded (SWS) transmission lines is...
While the RF building blocks of narrowband system-on-chip designs have increasingly been created in...
A 3.3V single-supply fully-integrated distributed amplifier was implemented in a standard 0.35 μm CM...
This paper presents designs and measurements of distributed amplifiers (DAs) processed on a 130-nm s...
A distributed amplifier is an amplifier in which a signal is amplified in parallel by a number of tr...
Abstract — The feasibility of using standard 0.18µm CMOS technology for low cost wideband radio fre...
Millimetre-wave technology is used for applications such as telecommunications and imaging. For both...
A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-[ohm] input and output matching ...
Emergent millimeter-wave (mm-wave) integrated technologies will find applications where the ample av...
This paper describes a single-ended five-stage CMOS distributed amplifier employing m-derived filter...
A design of 89.5 GHz 3-dB bandwidth distributed amplifier in a 0.7-μm InP technology is presented in...
This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical c...
[[abstract]]A 3-10 GHz CMOS distributed amplifier (DA) with. at and low noise figure (NF) and. at an...
This book describes methods to design distributed amplifiers useful for performing circuit functions...
Distributed amplifiers were fabricated successfully with a gain of 8 dB plusminus 1 dB in the freque...
A four-stage distributed amplifier utilizing low-loss slow-wave shielded (SWS) transmission lines is...
While the RF building blocks of narrowband system-on-chip designs have increasingly been created in...
A 3.3V single-supply fully-integrated distributed amplifier was implemented in a standard 0.35 μm CM...
This paper presents designs and measurements of distributed amplifiers (DAs) processed on a 130-nm s...
A distributed amplifier is an amplifier in which a signal is amplified in parallel by a number of tr...
Abstract — The feasibility of using standard 0.18µm CMOS technology for low cost wideband radio fre...
Millimetre-wave technology is used for applications such as telecommunications and imaging. For both...
A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-[ohm] input and output matching ...
Emergent millimeter-wave (mm-wave) integrated technologies will find applications where the ample av...
This paper describes a single-ended five-stage CMOS distributed amplifier employing m-derived filter...
A design of 89.5 GHz 3-dB bandwidth distributed amplifier in a 0.7-μm InP technology is presented in...
This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical c...
[[abstract]]A 3-10 GHz CMOS distributed amplifier (DA) with. at and low noise figure (NF) and. at an...
This book describes methods to design distributed amplifiers useful for performing circuit functions...