A broadband differential Transimpedance amplifier (TIA) has been designed and measured in 0.13μm BiCMOS Technology. Regulated Cascode (RGC) configuration has been employed to reduce the effect of the large parasitic capacitor of the PIN diode. The added CPD, representing PIN diode parasitic capacitor, is 300fF. The TIA has 53.6 dBΩ differential transimpedance gain and 28GHz measured bandwidth. The total measured integrated input referred noise is 6.11μArms. The TIA chip including the TIA and 3 stages of buffer consumes 110mW power from a 3V power supply. The active chip area is 330μmx210μm and the total chip area including the pads is 1050μmx530μm
Embargoed until 1 April 2024This research work introduces five novel gm-boosted transimpedance ampli...
This letter describes a D-band 3-stage cascode amplifier developed using the IHP 0.13 μm SiGe BiCMOS...
A compact two-stage differential cascode power amplifier is designed and fabricated in 45 nm standar...
Abstract — A 26 GHz transimpedance amplifier (TIA) with transformer-based regulated cascode (RGC) i...
We report a fully differential transimpedance amplifier (TIA) using common base and cascode topology...
Abstract—In this paper, a novel bandwidth enhancement tech-nique based on the combination of capacit...
[[abstract]]A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From th...
In this paper, a novel bandwidth enhancement technique based on the combination of capacitive degene...
[[abstract]]A 10.5 Gb/s modified shunt-feedback transimpedance amplifier in a commercial 0.35 μm SiG...
A 3-stage dual TransImpedance Ampffier (TIA) on one 2x7.8 mm2 GaAs chip with 0.2 pm pHEMT technologt...
This paper presents a high bandwidth transimpedance amplifier (TIA) used as a high speed input buffe...
In this paper, a novel current-mode transimpedance amplifier (TIA) exploiting the common gate input ...
A 3-stage dual TransImpedance Amplifier (TIA) on one 2x1.8 mm2 GaAs chip with 0.2 µm pHEMT technolog...
iting amplifier (TIALA) with 100- A pp sensitivity and 6 mA pp input overload current is presented. ...
[[abstract]]A 10-Gb/s fully integrated optical receiver analog frontend was realized in a commercial...
Embargoed until 1 April 2024This research work introduces five novel gm-boosted transimpedance ampli...
This letter describes a D-band 3-stage cascode amplifier developed using the IHP 0.13 μm SiGe BiCMOS...
A compact two-stage differential cascode power amplifier is designed and fabricated in 45 nm standar...
Abstract — A 26 GHz transimpedance amplifier (TIA) with transformer-based regulated cascode (RGC) i...
We report a fully differential transimpedance amplifier (TIA) using common base and cascode topology...
Abstract—In this paper, a novel bandwidth enhancement tech-nique based on the combination of capacit...
[[abstract]]A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From th...
In this paper, a novel bandwidth enhancement technique based on the combination of capacitive degene...
[[abstract]]A 10.5 Gb/s modified shunt-feedback transimpedance amplifier in a commercial 0.35 μm SiG...
A 3-stage dual TransImpedance Ampffier (TIA) on one 2x7.8 mm2 GaAs chip with 0.2 pm pHEMT technologt...
This paper presents a high bandwidth transimpedance amplifier (TIA) used as a high speed input buffe...
In this paper, a novel current-mode transimpedance amplifier (TIA) exploiting the common gate input ...
A 3-stage dual TransImpedance Amplifier (TIA) on one 2x1.8 mm2 GaAs chip with 0.2 µm pHEMT technolog...
iting amplifier (TIALA) with 100- A pp sensitivity and 6 mA pp input overload current is presented. ...
[[abstract]]A 10-Gb/s fully integrated optical receiver analog frontend was realized in a commercial...
Embargoed until 1 April 2024This research work introduces five novel gm-boosted transimpedance ampli...
This letter describes a D-band 3-stage cascode amplifier developed using the IHP 0.13 μm SiGe BiCMOS...
A compact two-stage differential cascode power amplifier is designed and fabricated in 45 nm standar...