Chemical vapour deposition of In 2O 3 thin films from a tris-guanidinate indium precursor
- Barry, S.T. (Seán T.)
- Gordon, P.G. (Peter G.)
- Ward, M.J. (Matthew J.)
- Heikkila, M.J. (Mikko J.)
- Monillas, W.H. (Wesley H.)
- Yap, G.P.A. (Glenn P. A.)
- Ritala, M. (Mikko)
- Leskelä, M. (Markku)
DOIAbstract
A new homoleptic sublimable indium(iii) guanidinate, (In[(N iPr) 2CNMe 2] 3 (1), was synthesized from a facile high-yield procedure. Compound 1 crystallized is a P1 space group; a = 10.5989(14) Å, b = 11.0030(15) Å, c = 16.273(2) Å, α = 91.190(2)°, β = 96.561(2)°, γ = 115.555(2)°; R = 3.50%. Thermogravimetric analysis showed 1 to produce elemental indium as a residual mass. Thermolysis in a sealed NMR tube showed carbodiimide and protonated dimethyl amine by 1H NMR. Chemical vapour deposition experiments above 275 °C with air as the reactant gas showed 1 to readily deposit cubic indium oxide with good transparency
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