Publication date
January 2000
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A comprehensive design method for a dual-gate MOSFET (DGFET) mixer is proposed which provides a practical procedure to predict both the conversion gain and input compression point and to identify optimal bias conditions and local oscillator (LO) power level. Each step in the process can be implemented by either simulation or experimental methods and is suitable for both up-conversion or down-conversion. The technique is aimed at producing a well engineered design, not a rigorous numerical solution. Using a discrete packaged device, a single-balanced DGFET down-converter mixer circuit is designed and characterized using an RF input frequency of 857 MHz, LO frequency of 694 MHz, and an IF output frequency of 163 MHz
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