A method for contact resistivity measurement using thick, uniformly doped substrates

A method for measuring contact resistivity ρ{variant}c which makes use of thick, uniformly doped semiconductor samples is presented. The contacts take the form of parallel stripes which extend across the width of the sample, producing a two-dimensional current distribution. Conformal mapping is used to relate the resistance measured between the stripes to ρ{variant}c, the substrate resistivity ρ{variant}B, and the sample geometry