Add to ORKGThe effect of 900°C furnace annealing on transistors with in situ phosphorus-doped polysilicon emitters has been investigated. For devices with chemically grown interfacial oxides, annealing is essential to give acceptable emitter resistance and emitter Gummel numbers. For devices lacking an intentionally grown interfacial oxide, annealing is necessary to reduce the emitter resistance to a tolerable level, but it simultaneously lowers the emitter Gummel number
Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a co...
The fast diffusion of fluorine in polysilicon and silicon dioxide is shown to improve the base curre...
A strong correlation has been found between the electrical, compositional and structural properties ...
In-situ boron-doped polysilicon has been used to form the emitter in p-n-p transistors. Various poly...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
The recent developments in rapid thermal processing in the past several years have shown it to have ...
The d.c. characteristics are computed for pnp polysilicon emitter transistors (PETs) in which a thin...
This paper investigates the effects of an in-situ hydrogen bake and an ex-situ HF etch prior to poly...
Transmission Electron Microscope (TEM) studies have been carried out of emitter regions in polysilic...
A polysilicon emitter transistor has been fabricated in which the metallurgical base/emitter junctio...
Silicon bipolar transistors have been fabricated with arsenic implanted or phosphorous diffused poly...
In-situ phosphorus-doped polysilicon emitters deposited on monocrystalline silicon substrates at a t...
This thesis investigates the use of in-situ phosphorus doped polysilicon emitter contacts in deep su...
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by...
The influence on the electrical performance of double-polysilicon self-aligned bipolar junction tran...
Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a co...
The fast diffusion of fluorine in polysilicon and silicon dioxide is shown to improve the base curre...
A strong correlation has been found between the electrical, compositional and structural properties ...
In-situ boron-doped polysilicon has been used to form the emitter in p-n-p transistors. Various poly...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
The recent developments in rapid thermal processing in the past several years have shown it to have ...
The d.c. characteristics are computed for pnp polysilicon emitter transistors (PETs) in which a thin...
This paper investigates the effects of an in-situ hydrogen bake and an ex-situ HF etch prior to poly...
Transmission Electron Microscope (TEM) studies have been carried out of emitter regions in polysilic...
A polysilicon emitter transistor has been fabricated in which the metallurgical base/emitter junctio...
Silicon bipolar transistors have been fabricated with arsenic implanted or phosphorous diffused poly...
In-situ phosphorus-doped polysilicon emitters deposited on monocrystalline silicon substrates at a t...
This thesis investigates the use of in-situ phosphorus doped polysilicon emitter contacts in deep su...
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by...
The influence on the electrical performance of double-polysilicon self-aligned bipolar junction tran...
Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a co...
The fast diffusion of fluorine in polysilicon and silicon dioxide is shown to improve the base curre...
A strong correlation has been found between the electrical, compositional and structural properties ...