Organic thin film transistors have the potential to replace silicon based transistors in applications such as smart cards and RF-ID due to their low cost and low processing temperatures. Thermally evaporated pentacene is studied as an organic thin film material. Thin film transistors were fabricated in bottom contact structure using thermal evaporation of pentacene at a rate of 0.5 to 1 nm/s. Heavily doped Si was used as a gate material and 100 nm thick silicon dioxide was used as a dielectric. Ni was used as contact metal for source and drain contacts. Threshold voltage of 16 V and mobility of 0.0016 cm2/V-s were obtained. Grain size in pentacene films increased from 120 nm to 150 nm upon annealing at 200 ◦C for 30 min. in nitrogen ambient...