Intensity analysis of polarized Raman spectra for off axis single crystal silicon

In this work we demonstrate that polarized backscattered Raman spectroscopy can be used for identifying the crystallographic orientation of silicon cut off axis. The orientation of the crystal is defined by two angles one defined between the (0 0 1) crystal axis and the lab z-axis and the other as the angle of rotation of the crystallographic x-y plane about the crystal’s z-axes. Theoretical Raman intensity profiles are generated by rotating wafers of different geometry about the lab z-axis in the backscattered configuration. This changes the polarization of the incident light with respect to the crystallographic axes. The impact of the off axis Si on the Raman intensity profile were investigated to identified specific signatures in the Raman spectra that are most effective in determining the degree of off axis cut for single crystal Si. The results show excellent agreement with experimental outcomes