Add to ORKGThe influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined
Turn‐on and turn‐off of bulk semiconductor switches, based on excitation and quenching of photocondu...
In this work copper in silicon is studied by means of the microwave photoconductive decay technique....
The modification of the bulk resistivity of semi-insulating GaAs caused by incorporation of copper h...
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization a...
This dissertation describes some of the properties of copper-compensated, silicon-doped GaAs (Cu:Si:...
Diffusion of copper in silicon doped gallium arsenide under different diffusion conditions is studie...
Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with ...
The processes of persistent photoconductivity followed by photo-quenching are demonstrated in copper...
The properties of transition metals in gallium arsenide have been previously investigated extensivel...
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The resul...
The dark current characteristics of gallium arsenide doped with silicon and compensated with diffuse...
Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide w...
A concept for a bulk semiconductor switch is presented, where the conductivity is increased and redu...
A model for a bulk GaAs photoconductive switch has been developed and solved to determine the perfor...
A two-dimensional time dependent computer model of a GaAs PCSS has been developed to investigate non...
Turn‐on and turn‐off of bulk semiconductor switches, based on excitation and quenching of photocondu...
In this work copper in silicon is studied by means of the microwave photoconductive decay technique....
The modification of the bulk resistivity of semi-insulating GaAs caused by incorporation of copper h...
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization a...
This dissertation describes some of the properties of copper-compensated, silicon-doped GaAs (Cu:Si:...
Diffusion of copper in silicon doped gallium arsenide under different diffusion conditions is studie...
Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with ...
The processes of persistent photoconductivity followed by photo-quenching are demonstrated in copper...
The properties of transition metals in gallium arsenide have been previously investigated extensivel...
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The resul...
The dark current characteristics of gallium arsenide doped with silicon and compensated with diffuse...
Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide w...
A concept for a bulk semiconductor switch is presented, where the conductivity is increased and redu...
A model for a bulk GaAs photoconductive switch has been developed and solved to determine the perfor...
A two-dimensional time dependent computer model of a GaAs PCSS has been developed to investigate non...
Turn‐on and turn‐off of bulk semiconductor switches, based on excitation and quenching of photocondu...
In this work copper in silicon is studied by means of the microwave photoconductive decay technique....
The modification of the bulk resistivity of semi-insulating GaAs caused by incorporation of copper h...