Add to ORKGThe physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit
Abstract—Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily do...
[[abstract]]Q‐switched laser irradiation has been used to anneal O+‐implanted silicon to form SiO2 l...
International audienceDamage evolution and dopant distribution during nanosecond laser thermal annea...
[[abstract]]This paper describes a study comparing the results of the electrical measurements and th...
Irradiation of crystalline silicon by pulsed ruby laser induces a surface phase change. A direct mea...
Laser thermal processing (LTP) of ion implanted silicon involves melting and recrystallizing an impl...
On étudie certaines propriétés optiques de couches de silicium dopées au-delà de la solubilité maxim...
cited By 1International audienceThe formation of extended defects and their impact on dopant activat...
[[abstract]]This paper describes the characterization of residual defects using transient capacitanc...
Call number: LD2668 .T4 EECE 1987 H67Master of ScienceElectrical and Computer Engineerin
The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown sili...
Defect engineering is foundational to classical electronic device development and for emerging quant...
Works devoted to the study of point defects in pulsed laser annealed silicon are reviewed by means o...
Abstract—Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily do...
[[abstract]]Q‐switched laser irradiation has been used to anneal O+‐implanted silicon to form SiO2 l...
International audienceDamage evolution and dopant distribution during nanosecond laser thermal annea...
[[abstract]]This paper describes a study comparing the results of the electrical measurements and th...
Irradiation of crystalline silicon by pulsed ruby laser induces a surface phase change. A direct mea...
Laser thermal processing (LTP) of ion implanted silicon involves melting and recrystallizing an impl...
On étudie certaines propriétés optiques de couches de silicium dopées au-delà de la solubilité maxim...
cited By 1International audienceThe formation of extended defects and their impact on dopant activat...
[[abstract]]This paper describes the characterization of residual defects using transient capacitanc...
Call number: LD2668 .T4 EECE 1987 H67Master of ScienceElectrical and Computer Engineerin
The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown sili...
Defect engineering is foundational to classical electronic device development and for emerging quant...
Works devoted to the study of point defects in pulsed laser annealed silicon are reviewed by means o...
Abstract—Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily do...
[[abstract]]Q‐switched laser irradiation has been used to anneal O+‐implanted silicon to form SiO2 l...
International audienceDamage evolution and dopant distribution during nanosecond laser thermal annea...