Add to ORKGThermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 films on SiC were investigated using isotopic substitution and nuclear reaction analyses. Hydrogen deuterium is found near the SiO2 film surface or close to the SiO2 /SiC interface depending on the oxidation/D2-annealing sequence, being much more strongly bound to SiC-based structures than to their Si counterparts. C compounds near the interface seem to play a significant role on the physicochemical and consequently on the electrical characteristics of the D passivated SiO2 /SiC interface
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
High temperature passivating contacts for c-Si based solar cells are intensively studied because of ...
Si-H bonds play a major role in microelectronic device technology. Upon electrical and thermal stres...
Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 f...
Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were in...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were in...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO...
The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose di...
Silicon carbide (SiC) is a wide bandgap semiconductor which has material properties well-suited for ...
International audienceThe effect of forming gas and vacuum annealing on the concentration of carbon ...
The electrical performance of SiC-based microelectronic devices is strongly affected by the densitie...
High-resolution transmission electron microscopy (HR TEM) reveals an atomically flat SiC surface aft...
This study is focused on characterization of deep energy-level interface traps formed during sodium ...
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
High temperature passivating contacts for c-Si based solar cells are intensively studied because of ...
Si-H bonds play a major role in microelectronic device technology. Upon electrical and thermal stres...
Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 f...
Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were in...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were in...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO...
The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose di...
Silicon carbide (SiC) is a wide bandgap semiconductor which has material properties well-suited for ...
International audienceThe effect of forming gas and vacuum annealing on the concentration of carbon ...
The electrical performance of SiC-based microelectronic devices is strongly affected by the densitie...
High-resolution transmission electron microscopy (HR TEM) reveals an atomically flat SiC surface aft...
This study is focused on characterization of deep energy-level interface traps formed during sodium ...
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
High temperature passivating contacts for c-Si based solar cells are intensively studied because of ...
Si-H bonds play a major role in microelectronic device technology. Upon electrical and thermal stres...