Add to ORKGDeep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250°C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2...
The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2...
Deep level transient spectroscopy was employed to determine the electrical properties of defects ind...
Deep level transient spectroscopy was employed to determine the electrical properties of defects ind...
Deep level transient spectroscopy was employed to determine the electrical properties of defects ind...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAs...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga...
The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga...
Defects created in rapid thermally annealed (RTA) SiO2-capped epitaxial GaAs layers grown by metal-o...
Two metastable defect configurations, here designated M3 and M4, are observed in n-type GaAs grown b...
The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2...
The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2...
Deep level transient spectroscopy was employed to determine the electrical properties of defects ind...
Deep level transient spectroscopy was employed to determine the electrical properties of defects ind...
Deep level transient spectroscopy was employed to determine the electrical properties of defects ind...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAs...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga...
The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga...
Defects created in rapid thermally annealed (RTA) SiO2-capped epitaxial GaAs layers grown by metal-o...
Two metastable defect configurations, here designated M3 and M4, are observed in n-type GaAs grown b...
The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2...
The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2...