Add to ORKGRedistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times
In this study, it was aimed to produce titanium silicide layer on Ti6Al4V by a simple, cheap and eff...
Silicides have been used in CMOS technology for some years mainly to reduce sheet resistance in the ...
Kinetics and mechanisms of metastable (C49-TiSi$\sb2)$ and stable titanium disilicides (C54-TiSi$\sb...
Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to Ti...
[[abstract]]Titanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapi...
The influence of implanted arsenic on Ti-silicidation processes in TiN/Ti/Si-substrate structures wa...
The silicidation reaction between a titanium metal film, capped by a TiN layer, and a boron-implante...
[[abstract]]An investigation on the influences of doping impurities on the formation of titanium sil...
Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin...
The interactions occurring in a Ti–Si bilayer have been investigated by in situ resistance measureme...
Silicide formation with Ti deposited on single crystal Si and Ti deposited on amorphous Si layers se...
In this study, the influence of oxygen and arsenic which both have a high affinity to form compounds...
The goal of this experimentation consists of the formation of TiSi2 and demonstration of its electri...
ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium d...
The authors report on the effects of ion implantation and rapid thermal annealing on the electrical ...
In this study, it was aimed to produce titanium silicide layer on Ti6Al4V by a simple, cheap and eff...
Silicides have been used in CMOS technology for some years mainly to reduce sheet resistance in the ...
Kinetics and mechanisms of metastable (C49-TiSi$\sb2)$ and stable titanium disilicides (C54-TiSi$\sb...
Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to Ti...
[[abstract]]Titanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapi...
The influence of implanted arsenic on Ti-silicidation processes in TiN/Ti/Si-substrate structures wa...
The silicidation reaction between a titanium metal film, capped by a TiN layer, and a boron-implante...
[[abstract]]An investigation on the influences of doping impurities on the formation of titanium sil...
Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin...
The interactions occurring in a Ti–Si bilayer have been investigated by in situ resistance measureme...
Silicide formation with Ti deposited on single crystal Si and Ti deposited on amorphous Si layers se...
In this study, the influence of oxygen and arsenic which both have a high affinity to form compounds...
The goal of this experimentation consists of the formation of TiSi2 and demonstration of its electri...
ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium d...
The authors report on the effects of ion implantation and rapid thermal annealing on the electrical ...
In this study, it was aimed to produce titanium silicide layer on Ti6Al4V by a simple, cheap and eff...
Silicides have been used in CMOS technology for some years mainly to reduce sheet resistance in the ...
Kinetics and mechanisms of metastable (C49-TiSi$\sb2)$ and stable titanium disilicides (C54-TiSi$\sb...