Defect states in plasma-deposited a-Si:H. Technical progress report, August-October 1979

Raman and ESR measurements were used to study the atomic bonding and defect concentrations. Features are identified in the Raman spectra which can be attributed to configurations containing Si-Si, Si-As and As-As bonds. Features due to all three of these configurations were found to simultaneously exist, thus excluding a chemically ordered model of the bonding. However, the composition dependences of the features do not follow exactly a random bonding model either. The H bonding configurations were reflected in features at approx.2000 cm/sup -1/ in the Raman spectra. It was found that the H bonding changed dramatically in the As doping to 5% As alloying region. The ESR measurements indicated a low level of singly occupied defect states in all the samples studied