Deposition of silicon carbide coatings on particles in a fluidized bed using silane and tetramethylsilane: a feasibility study

Deposition of silicon carbide (SiC) coatings from compounds such as methyltrichlorosilane (CH/sub 3/SiCl/sub 3/) results in corrosive chlorine-containing byproducts. The feasibility of depositing coatings from SiH/sub 4/ and Si(CH/sub 3/)/sub 4/, which contain no chlorine, was briefly studied. Coatings of SiC were deposited from Si(CH/sub 3/)/sub 4/ over the temperature range 1025 to 1525/sup 0/C in beds of particles fluidized with either H/sub 2/ or Ar. The densest coatings were deposited at 1025/sup 0/C, but none approached the theoretical density of SiC. A SiC coating was also deposited at 800/sup 0/C from a mixture of SiH/sub 4/, C/sub 2/H/sub 4/, and H/sub 2/