Add to ORKGWe report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface plasmon interaction between the quantum wells and evaporated silver layers, whereas no such enhancement was obtained from gold deposited samples
Thesis (Ph.D.)--Boston UniversityInGaN alloys and related quantum structures are of great technologi...
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature ...
The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanop...
We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface p...
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW...
Surface plasmon (SP) coupling technique was used to enhance blue and green light emissions from InGa...
Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devi...
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm ...
We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 44...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...
Group- III nitride based semiconductors have emerged as the leading material for short wavelength op...
Blue-green light-emitting diodes improve efficiencies by 25–120%. Although tremendous progress has b...
InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ...
Abstract A novel method to enhance light emission efficiencies from solid-state materials was develo...
The surface plasmon (SP) energy for resonant enhancement of light has shown to be modified by the ep...
Thesis (Ph.D.)--Boston UniversityInGaN alloys and related quantum structures are of great technologi...
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature ...
The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanop...
We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface p...
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW...
Surface plasmon (SP) coupling technique was used to enhance blue and green light emissions from InGa...
Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devi...
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm ...
We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 44...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...
Group- III nitride based semiconductors have emerged as the leading material for short wavelength op...
Blue-green light-emitting diodes improve efficiencies by 25–120%. Although tremendous progress has b...
InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ...
Abstract A novel method to enhance light emission efficiencies from solid-state materials was develo...
The surface plasmon (SP) energy for resonant enhancement of light has shown to be modified by the ep...
Thesis (Ph.D.)--Boston UniversityInGaN alloys and related quantum structures are of great technologi...
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature ...
The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanop...