A multi-element, time-dependent model developed by Childers et al. [A.S. Childers, M.T. Johnson, J. Ramírez-Rico, and K.T. Faber, J. Electrochem. Soc., 160:3093-3102, 2013] for copper infiltration of large (∼50–200 µm diameter), high aspect ratio (∼60) through-hole channels was experimentally tested for validity. The model built on the work of Akolkar and Landau [R. Akolkar and U. Landau, J. Electrochem. Soc., 151:702-711, 2004] for copper deposition in micro-scale integrated circuitry. Childers’ model broadens the original by including the transport and adsorption of all electrolyte species - inhibitors, accelerators, and copper ions. The resulting model is tested experimentally with wood-derived biomorphic carbon materials. Results indica...
A model for copper electroplating of through-silicon vias (TSV) is proposed based on the suppressor ...
The filling of microvias with a diameter of 5 µm and a depth of 25 µm (aspect ratio of 5) by copper ...
Blind holes 5 mu m in diameter and 25 mu m deep were filled with copper electrodeposited from a copp...
A multi-element, time-dependent model is used to examine additive-assisted copper electroplating in ...
A multi-element, time-dependent model is used to examine additive-assisted copper electroplating in ...
281 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.A simple copper deposition mo...
Nowadays, high performance of integrated circuits is owing its interconnections and packaging techno...
Through-chip electrodes for three-dimensional packaging can offer short interconnection and reduced ...
Through-chip electrodes for three-dimensional packaging can offer short interconnection and reduced ...
An additive-assisted copper electroplating technique designed for infiltrating high-aspect-ratio por...
We present two approaches to reduce the process time needed for filling vias of 5 µm diameter and 25...
Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon tec...
The primary current distribution and the resistance of a modified Hull cell are calculated by using ...
this paper, values of the parameters associated with the various steps in the overall reaction mecha...
A method is introduced for Cu bottom-up filling at trenches with dimensions similar to those of thro...
A model for copper electroplating of through-silicon vias (TSV) is proposed based on the suppressor ...
The filling of microvias with a diameter of 5 µm and a depth of 25 µm (aspect ratio of 5) by copper ...
Blind holes 5 mu m in diameter and 25 mu m deep were filled with copper electrodeposited from a copp...
A multi-element, time-dependent model is used to examine additive-assisted copper electroplating in ...
A multi-element, time-dependent model is used to examine additive-assisted copper electroplating in ...
281 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.A simple copper deposition mo...
Nowadays, high performance of integrated circuits is owing its interconnections and packaging techno...
Through-chip electrodes for three-dimensional packaging can offer short interconnection and reduced ...
Through-chip electrodes for three-dimensional packaging can offer short interconnection and reduced ...
An additive-assisted copper electroplating technique designed for infiltrating high-aspect-ratio por...
We present two approaches to reduce the process time needed for filling vias of 5 µm diameter and 25...
Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon tec...
The primary current distribution and the resistance of a modified Hull cell are calculated by using ...
this paper, values of the parameters associated with the various steps in the overall reaction mecha...
A method is introduced for Cu bottom-up filling at trenches with dimensions similar to those of thro...
A model for copper electroplating of through-silicon vias (TSV) is proposed based on the suppressor ...
The filling of microvias with a diameter of 5 µm and a depth of 25 µm (aspect ratio of 5) by copper ...
Blind holes 5 mu m in diameter and 25 mu m deep were filled with copper electrodeposited from a copp...