Error-correcting codes for permutations have received considerable attention in the past few years, especially in applications of the rank modulation scheme for flash memories. While codes over several metrics have been studied, such as the Kendall τ, Ulam, and Hamming distances, no recent research has been carried out for erasures and deletions over permutations. In rank modulation, flash memory cells represent a permutation, which is induced by their relative charge levels. We explore problems that arise when some of the cells are either erased or deleted. In each case, we study how these erasures and deletions affect the information carried by the remaining cells. In particular, we study models that are symbol-invariant, where unaffected...