We report on measurements of step-step interaction on a flat Si(111)−(7×7) surface and on vicinal Si(001) surfaces with miscut angles ranging between 0.2° and 8°. Starting from scanning tunneling microscopy images of these surfaces and describing steps profile and interactions by the continuum step model, we measured the self-correlation function of single steps and the distribution of terrace widths. Empirical parameters, such as step stiffness and step-step interaction strength, were evaluated from the images. The present experiment allows to assess the dependence of the step-step repulsion on miscut angle, showing how parameters drawn from tunneling images can be used to interpolate between continuum mesoscopic models and atomistic calcu...
We derive relationships between the amount of step wandering and the strength of step-step interacti...
金沢大学総合メディア基盤センターDuring deposition of Ga atoms, the structure of a Si(111) vicinal face is transforme...
Well-ordered stepped semiconductor surfaces attract intense attention owing to the regular arrangeme...
We report on measurements of step-step interaction on a flat Si (111) - (7×7) surface and on vicinal...
Using high-resolution scanning tunneling microscopy, we investigate the periodicity of mixed arrays ...
The roughness of monatomic A- and B-type step edges on 0.5° misoriented Si(001) has been analyzed on...
In this paper, we used an ultra-high-vacuum scanning tunneling microscope (STM) to study the step st...
金沢大学総合メディア基盤センター With a Si(001) vicinal surface in mind, we study step wandering instability on a vi...
We have used scanning tunneling microscopy to study Si(113) 0.2° misoriented towards [11-bar0]. Rapi...
We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) ...
金沢大学理学部With a Si~001! vicinal surface in mind, we study step wandering instability on a vicinal surf...
We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) ...
The step structure and terrace distribution of Si(001) vicinal surfaces has been studied by profile ...
Using spot profile analysis in low-energy electron diffraction, we have investigated vicinal Ge(100)...
We have observed a conversion of step configuration of 3.5 degrees miscut Si(001) surface after depo...
We derive relationships between the amount of step wandering and the strength of step-step interacti...
金沢大学総合メディア基盤センターDuring deposition of Ga atoms, the structure of a Si(111) vicinal face is transforme...
Well-ordered stepped semiconductor surfaces attract intense attention owing to the regular arrangeme...
We report on measurements of step-step interaction on a flat Si (111) - (7×7) surface and on vicinal...
Using high-resolution scanning tunneling microscopy, we investigate the periodicity of mixed arrays ...
The roughness of monatomic A- and B-type step edges on 0.5° misoriented Si(001) has been analyzed on...
In this paper, we used an ultra-high-vacuum scanning tunneling microscope (STM) to study the step st...
金沢大学総合メディア基盤センター With a Si(001) vicinal surface in mind, we study step wandering instability on a vi...
We have used scanning tunneling microscopy to study Si(113) 0.2° misoriented towards [11-bar0]. Rapi...
We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) ...
金沢大学理学部With a Si~001! vicinal surface in mind, we study step wandering instability on a vicinal surf...
We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) ...
The step structure and terrace distribution of Si(001) vicinal surfaces has been studied by profile ...
Using spot profile analysis in low-energy electron diffraction, we have investigated vicinal Ge(100)...
We have observed a conversion of step configuration of 3.5 degrees miscut Si(001) surface after depo...
We derive relationships between the amount of step wandering and the strength of step-step interacti...
金沢大学総合メディア基盤センターDuring deposition of Ga atoms, the structure of a Si(111) vicinal face is transforme...
Well-ordered stepped semiconductor surfaces attract intense attention owing to the regular arrangeme...