Add to ORKGA comprehensive study of MeV-^(15)N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained
Changes in electrical properties and crystal structure due to MeV, heavy-ion implants in GaAs have b...
The perturbed angular correlation (PAC) technique has been used to characterize the implantation-ind...
Post-implant annealing of InP and GaInAs is usually accomplished using thermal cycles of 10-30 minut...
A comprehensive study of MeV-^(15)N-ion-implanted InP by a variety of analytical techniques has reve...
MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been inve...
Cross-sectional and high resolution transmission electon microscopy (XTEM and HRTEM0 have been appli...
An experimental study of lattice disordering, the crystalline-to-amorphous (c-a) phase transition, a...
Ion implantation at keV energies has become a well-established technique for surface modification of...
A detailed study of the influence of substrate temperature on the radiation-induced lattice strain f...
We studied the lattice strain induced in the MeV ion bombarded InP crystals and the annealing behavi...
GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a ...
Defect formation has been studied in nitrogen-implanted III-V compound semiconductor material InP. S...
MeV ion beam processing provides a very promising technology for 3-dimensional device fabrication an...
MeV ion beams often allow unique opportunities for the modification of the electronic properties of ...
High energy (1-2 MeV) Fe implantation in InP was studied by means of Secondary Ions Mass Spectrometr...
Changes in electrical properties and crystal structure due to MeV, heavy-ion implants in GaAs have b...
The perturbed angular correlation (PAC) technique has been used to characterize the implantation-ind...
Post-implant annealing of InP and GaInAs is usually accomplished using thermal cycles of 10-30 minut...
A comprehensive study of MeV-^(15)N-ion-implanted InP by a variety of analytical techniques has reve...
MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been inve...
Cross-sectional and high resolution transmission electon microscopy (XTEM and HRTEM0 have been appli...
An experimental study of lattice disordering, the crystalline-to-amorphous (c-a) phase transition, a...
Ion implantation at keV energies has become a well-established technique for surface modification of...
A detailed study of the influence of substrate temperature on the radiation-induced lattice strain f...
We studied the lattice strain induced in the MeV ion bombarded InP crystals and the annealing behavi...
GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a ...
Defect formation has been studied in nitrogen-implanted III-V compound semiconductor material InP. S...
MeV ion beam processing provides a very promising technology for 3-dimensional device fabrication an...
MeV ion beams often allow unique opportunities for the modification of the electronic properties of ...
High energy (1-2 MeV) Fe implantation in InP was studied by means of Secondary Ions Mass Spectrometr...
Changes in electrical properties and crystal structure due to MeV, heavy-ion implants in GaAs have b...
The perturbed angular correlation (PAC) technique has been used to characterize the implantation-ind...
Post-implant annealing of InP and GaInAs is usually accomplished using thermal cycles of 10-30 minut...