Add to ORKGPhotoresponse of surface barriers on samples of Ga(As_(1−x_P_x) covering the range 0≤x≤1 has been measured. Thresholds corresponding to both direct and indirect band-to-band excitations within the semiconductor and also photoinjection from the metal have been identified. The threshold of the direct transition varies with composition from 1.37 eV in GaAs to 2.65 eV in GaP. The indirect transition was followed for x≳0.38 and again varied linearly from 2.2 eV in GaP to an extrapolated value in 1.62 eV in GaAs. The energy separation of the two conduction band minima in GaAs is in disagreement with previously reported values
We report on measurements of optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostru...
The bias dependence of the photoelectric barrier energy of n-GaAs-Al diodes has been measured. The d...
Some physical theories pertinent to the measurement properties of gallium arsenide are presented and...
Photoresponse of surface barriers on samples of Ga(As_(1−x_P_x) covering the range 0≤x≤1 has been me...
The photoresponse of surface barrier rectifiers made by evaporating a metal such as gold or platinum...
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and ...
In this study, the effects of the photo-responses of the near surface depletion layer and the deep b...
128 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.A new technique has been deve...
The behaviour of group III, IV and VI dopants in vertical Bridgman grown GaAs was studied as a funct...
Heat generated by silicon-based transistors due to high energy photo irradiation interferes with the...
Resolved critical point structures in Schottky-barrier electroreflectance spectra of Ga3dV-sp3 condu...
The ternary semiconductor GaAs{sub 1{minus}x}N{sub x} with 0 < x < 0.3 can be grown epitaxiall...
Zn-doped, p-type, GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ samples grown by low-pressure metal organi...
Une étude comparée des spectres de photoabsorption au voisinage des seuils L3 de As et de Ga dans Ga...
The forward current of Schottky barriers on n-type GaAs is investigated as a function of electron co...
We report on measurements of optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostru...
The bias dependence of the photoelectric barrier energy of n-GaAs-Al diodes has been measured. The d...
Some physical theories pertinent to the measurement properties of gallium arsenide are presented and...
Photoresponse of surface barriers on samples of Ga(As_(1−x_P_x) covering the range 0≤x≤1 has been me...
The photoresponse of surface barrier rectifiers made by evaporating a metal such as gold or platinum...
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and ...
In this study, the effects of the photo-responses of the near surface depletion layer and the deep b...
128 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.A new technique has been deve...
The behaviour of group III, IV and VI dopants in vertical Bridgman grown GaAs was studied as a funct...
Heat generated by silicon-based transistors due to high energy photo irradiation interferes with the...
Resolved critical point structures in Schottky-barrier electroreflectance spectra of Ga3dV-sp3 condu...
The ternary semiconductor GaAs{sub 1{minus}x}N{sub x} with 0 < x < 0.3 can be grown epitaxiall...
Zn-doped, p-type, GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ samples grown by low-pressure metal organi...
Une étude comparée des spectres de photoabsorption au voisinage des seuils L3 de As et de Ga dans Ga...
The forward current of Schottky barriers on n-type GaAs is investigated as a function of electron co...
We report on measurements of optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostru...
The bias dependence of the photoelectric barrier energy of n-GaAs-Al diodes has been measured. The d...
Some physical theories pertinent to the measurement properties of gallium arsenide are presented and...