Add to ORKGIt has been found that ion implantation doping results in the generation and diffusion of defect species, forming deep trapping levels. The effect of these levels on the electrical characteristics of zinc‐implanted GaAs diodes has been observed for the case of 70‐kV implantation at 400°C into substrates with n‐type concentrations ranging from 1 × 10^16 to 1.8 × 10^18 atoms/cm^3. Capacitance‐voltage measurements have indicated the presence of a semi‐insulating layer in the diodes, varying in thickness from 0.18 μ for the most heavily doped substrate to 2.7 μ for the lightest. Frequency dependence of the junction capacitance and power law variation of forward current vs voltage have also been observed and are attributed to deep levels
The formation of shallow junctions in the source and drain regions is a major challenge to the conti...
The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was...
International audienceIt is well established that low energy B+ ion implantation into Ge- (or Si) im...
It has been found that ion implantation doping results in the generation and diffusion of defect spe...
In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RT...
In the process of ion implantation, ion beams bombard the surface and create undesirable surface eff...
With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integr...
Deep-level defect centers on the n-side of p+n junction diodes formed by low and elevated temperatur...
Deep level transient spectroscopy was employed to determine the electrical properties of defects ind...
Measurements of electron injection currents in p+‐n diodes are presented for a range of p‐type dopan...
Two Ga-acceptor levels, located at EV+0.31eV and EV+0.37eV, respectively, have been observed in the ...
The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by ...
Nitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junct...
Ion implantation of zinc into n-type GaAs substrates at room temperature is used as a process of pre...
Abstract The distribution of energy levels within the bandgap of epitaxial 4H-SiC p + /n junctions...
The formation of shallow junctions in the source and drain regions is a major challenge to the conti...
The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was...
International audienceIt is well established that low energy B+ ion implantation into Ge- (or Si) im...
It has been found that ion implantation doping results in the generation and diffusion of defect spe...
In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RT...
In the process of ion implantation, ion beams bombard the surface and create undesirable surface eff...
With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integr...
Deep-level defect centers on the n-side of p+n junction diodes formed by low and elevated temperatur...
Deep level transient spectroscopy was employed to determine the electrical properties of defects ind...
Measurements of electron injection currents in p+‐n diodes are presented for a range of p‐type dopan...
Two Ga-acceptor levels, located at EV+0.31eV and EV+0.37eV, respectively, have been observed in the ...
The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by ...
Nitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junct...
Ion implantation of zinc into n-type GaAs substrates at room temperature is used as a process of pre...
Abstract The distribution of energy levels within the bandgap of epitaxial 4H-SiC p + /n junctions...
The formation of shallow junctions in the source and drain regions is a major challenge to the conti...
The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was...
International audienceIt is well established that low energy B+ ion implantation into Ge- (or Si) im...