New advancements in charge-coupled device technology - sub-electron noise and 4096×4096 pixel CCDs

This paper reports on two new advancements in CCD technology. The first area of development has produced a special purpose ceo designed for ultra low-signal level imaging and spectroscopy applications that require sub-electron read noise floors. A nondestructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are reported. The second development involves the design and performance of a high resolution imager of 4096x4096 pixels, the largest ceo manufactured in terms of pixel count. The device utilizes a 7.5-micron pixel fabricated with three-level poly silicon to achieve high yield