MeV ion beam processing of III–V compound semiconductors

MeV ion beam processing provides a very promising technology for 3-dimensional device fabrication and property modification of deeply buried interfaces; its application to III–V compound semiconductors will be presented. Using MeV oxygen ion implantation one can produce deeply buried insulating layers in n-type GaAs crystals, and induce compositional disordering in GaAs/GaAlAs superlattices. It has been employed, as a simple and promising technique, for fabricating high efficiency single quantum well GRINSCH GaAs/AlGaAs lasers. Formation of deeply buried high resistivity layers in n-type InP has also been investigated. A comprehensive study of MeV-ion-implanted InP by a variety of analytical techniques has provided a coherent picture of implanted distribution, structural transition, crystalline damage, and lattice strain in the implanted InP crystals, and has led to a good understanding of the physical processes involved in MeV ion implantation and subsequent thermal annealing. Application of MeV nitrogen ion implanted InP to laser devices will also be discussed