Cross-sectional and high resolution TEM studies of structural phase transitions in MeV-ion-implanted InP crystals

Cross-sectional and high resolution transmission electon microscopy (XTEM and HRTEM0 have been applied to investigate radiation damage and structural phase transitions in MeV-ion-implanted InP compound semiconductors. It has been found that the crystalline-amorphous transition in the implanted layer occurs at an implant dose over 1 × 10^(15)/cm^2, with the buried amorphous layer extending towards the sample surface as the implant dose increases. The recrystallization in the buried layer was stimulated through solid-phase epitaxy and homogeneous nucleation processes during thermal annealing at 500°C, resulting in a highly disordered structure. The results have led to a comprehensive understanding of mechecanisms of phase transitions in MeV-ion-implanted InP and complement the results of other characterization techniques