Add to ORKGA critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating phosphorus-doped silicon near the metal-insulator transition has been observed. The results are interpreted as evidence of an electron glass, i.e., glasslike behavior, intimately connected with the scaling description of the transition, in which Coulomb interactions play a significant role
The authors examine the critical divergence of the low-frequency conductivity of the noninteracting ...
A high-resolution scan of the metal-insulator transition in Si:P at millikelvin temperatures has bee...
A high-resolution scan of the metal-insulator transition in Si:P at millikelvin temperatures has bee...
A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating...
Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in b...
Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in b...
We present measurements of the electrical conductivity at low temperatures of bulk samples of Si:P u...
We present measurements of the electrical conductivity at low temperatures of bulk samples of Si:P u...
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value σ_(...
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value σ_(...
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value σ_(...
We have measured zero temperature metallic conductivities above and below Mott's minimum value σ_(M...
We have measured zero temperature metallic conductivities above and below Mott's minimum value σ_(M...
The authors examine the critical divergence of the low-frequency conductivity of the noninteracting ...
The authors examine the critical divergence of the low-frequency conductivity of the noninteracting ...
The authors examine the critical divergence of the low-frequency conductivity of the noninteracting ...
A high-resolution scan of the metal-insulator transition in Si:P at millikelvin temperatures has bee...
A high-resolution scan of the metal-insulator transition in Si:P at millikelvin temperatures has bee...
A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating...
Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in b...
Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in b...
We present measurements of the electrical conductivity at low temperatures of bulk samples of Si:P u...
We present measurements of the electrical conductivity at low temperatures of bulk samples of Si:P u...
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value σ_(...
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value σ_(...
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value σ_(...
We have measured zero temperature metallic conductivities above and below Mott's minimum value σ_(M...
We have measured zero temperature metallic conductivities above and below Mott's minimum value σ_(M...
The authors examine the critical divergence of the low-frequency conductivity of the noninteracting ...
The authors examine the critical divergence of the low-frequency conductivity of the noninteracting ...
The authors examine the critical divergence of the low-frequency conductivity of the noninteracting ...
A high-resolution scan of the metal-insulator transition in Si:P at millikelvin temperatures has bee...
A high-resolution scan of the metal-insulator transition in Si:P at millikelvin temperatures has bee...