Add to ORKGUsing ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic states of Si (111) and GaAs (110) surface, (ii) the relaxation of the Si (111) surface, (iii) the reconstruction of the GaAs surface, (iv) the initial steps in the chemisorption of O_2 on Si (111), and (v) the bonding of O atom to Ga and As centers
This work addresses the key issues of the passivation of the III-V compound semiconductors surfaces ...
The chemical, structural, and electronic properties of semiconductor surfaces are known to strongly ...
The band-edge positions of H-, Cl-, Br-, methyl-, and ethyl-terminated Si(111) surfaces were investi...
Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic s...
Using ab initio methods (generalized valence bond with small clusters to represent the surface), we ...
Contains an introduction, reports on two research projects and a list of publications.Joint Services...
The objective of this thesis is to study the electronic structure, geometries and chemical binding c...
There are a number of difficulties in elucidating the microscopic details of the electronic states a...
Using ab initio generalized valence bond (GVB) and configuration interaction (CI) methods with clus...
We have studied the initial stages of the chemisorption of Al and Ga on the clean GaAs (110) surface...
We have studied the reconstruction of the (110) surface of various III–V semiconductor compounds (Ga...
The atomic geometry and the electronic structure of GaAs(110) and Si(111) with full coverage of chem...
An empirical tight-binding (ETB) approach combined with a Green's-function (GF) method has been...
The adsorption processes of an Si atom on GaAs(1 1 1)A surfaces under growth conditions are investig...
We present an overview of basic adsorption and dynamical processes at semiconductor surfaces, studie...
This work addresses the key issues of the passivation of the III-V compound semiconductors surfaces ...
The chemical, structural, and electronic properties of semiconductor surfaces are known to strongly ...
The band-edge positions of H-, Cl-, Br-, methyl-, and ethyl-terminated Si(111) surfaces were investi...
Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic s...
Using ab initio methods (generalized valence bond with small clusters to represent the surface), we ...
Contains an introduction, reports on two research projects and a list of publications.Joint Services...
The objective of this thesis is to study the electronic structure, geometries and chemical binding c...
There are a number of difficulties in elucidating the microscopic details of the electronic states a...
Using ab initio generalized valence bond (GVB) and configuration interaction (CI) methods with clus...
We have studied the initial stages of the chemisorption of Al and Ga on the clean GaAs (110) surface...
We have studied the reconstruction of the (110) surface of various III–V semiconductor compounds (Ga...
The atomic geometry and the electronic structure of GaAs(110) and Si(111) with full coverage of chem...
An empirical tight-binding (ETB) approach combined with a Green's-function (GF) method has been...
The adsorption processes of an Si atom on GaAs(1 1 1)A surfaces under growth conditions are investig...
We present an overview of basic adsorption and dynamical processes at semiconductor surfaces, studie...
This work addresses the key issues of the passivation of the III-V compound semiconductors surfaces ...
The chemical, structural, and electronic properties of semiconductor surfaces are known to strongly ...
The band-edge positions of H-, Cl-, Br-, methyl-, and ethyl-terminated Si(111) surfaces were investi...