The relative lineup of the band structures of the two constituents of a semiconductor superlattice can cause charge carriers to be confined. This occurs when the energy of a superlattice state is located in an allowed energy region of one of the constituents (the "well" semiconductor), but in the band gap of the other (the "barrier" semiconductor). A charge carrier will tend to be confined in the layers made from the semiconductor with the allowed region at that energy. It will have an exponentially decaying amplitude to be found in the semiconductor with a band gap at that energy
We have studied different methods for calculating band structures of solids and their density of sta...
We report the results of a study of the electronic properties of the AlAs–GaAs interface using the t...
Band-edge optical absorption spectra in two series of monoperiodic GaAs/AlAs superlattice diodes are...
The relative lineup of the band structures of the two constituents of a semiconductor superlattice c...
A theory of the band structure of semiconductor superlattices has been developed for both the direct...
The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We...
The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We...
The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We...
Along with the growing interest in semiconductor superlattices, various theoretical schemes have bee...
We discuss the electronic-level structure of finite semiconductor superlattices and the influence of...
The work presented here is concerned with theoretical investigations of electronic states in small-s...
In this paper we consider a new superlattice system consisting of alternating layers of CdTe and HgT...
ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice u...
Propagation of charged carriers in semiconductor superlattices is analyzed on the basis of the effec...
Propagation of charged carriers in semiconductor superlattices is analyzed on the basis of the effec...
We have studied different methods for calculating band structures of solids and their density of sta...
We report the results of a study of the electronic properties of the AlAs–GaAs interface using the t...
Band-edge optical absorption spectra in two series of monoperiodic GaAs/AlAs superlattice diodes are...
The relative lineup of the band structures of the two constituents of a semiconductor superlattice c...
A theory of the band structure of semiconductor superlattices has been developed for both the direct...
The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We...
The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We...
The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We...
Along with the growing interest in semiconductor superlattices, various theoretical schemes have bee...
We discuss the electronic-level structure of finite semiconductor superlattices and the influence of...
The work presented here is concerned with theoretical investigations of electronic states in small-s...
In this paper we consider a new superlattice system consisting of alternating layers of CdTe and HgT...
ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice u...
Propagation of charged carriers in semiconductor superlattices is analyzed on the basis of the effec...
Propagation of charged carriers in semiconductor superlattices is analyzed on the basis of the effec...
We have studied different methods for calculating band structures of solids and their density of sta...
We report the results of a study of the electronic properties of the AlAs–GaAs interface using the t...
Band-edge optical absorption spectra in two series of monoperiodic GaAs/AlAs superlattice diodes are...