State-of-the-art radio astronomy terahertz receivers utilize clusters of super-conducting mixers with cryogenic IF amplifiers. The critical parameters of the IF amplifiers are noise temperature, bandwidth, power consumption, input return loss, and physical size. This paper presents test data on three approaches to the IF amplifier; two are silicon-germanium (SiGe) monolithic microwave integrated circuit designs and the third is a discrete SiGe transistor miniature module. The amplifiers provide noise temperatures in the range of 5-15 K, from 1 to 6 GHz, at power consumptions as low as 2 mW
In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically des...
This paper demonstrates two designs of extremely low noise amplifiers in the low frequency range of ...
Monolithic (MMIC) and discrete transistor (MIC) low noise amplifiers are compared on the basis of pe...
State-of-the-art radio astronomy terahertz receivers utilize clusters of super-conducting mixers wit...
As part of Onsala Space Observatory instrumentation activities, a 3.4-4.6 GHz and a 4-8 GHz cryogeni...
This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise ...
This PhD thesis presents the work that was done developing radioastronomy instrumentation. The first...
Abstract—This paper describes a method for designing cryo-genic silicon–germanium (SiGe) transistor ...
In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideban...
We have realized receiving - amplifying circuits for a frequency range of 21.0-23.0 GHz using freque...
The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic t...
In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermedia...
instrumentation activities, several low noise, low power consumption cryogenic amplifiers were devel...
Two packaged low noise amplifiers for the 0.3–4 GHz frequency range are described. The amplifiers ca...
MESFETS increasingly dominate the microwave amplifier field. The inherently low noise of the field e...
In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically des...
This paper demonstrates two designs of extremely low noise amplifiers in the low frequency range of ...
Monolithic (MMIC) and discrete transistor (MIC) low noise amplifiers are compared on the basis of pe...
State-of-the-art radio astronomy terahertz receivers utilize clusters of super-conducting mixers wit...
As part of Onsala Space Observatory instrumentation activities, a 3.4-4.6 GHz and a 4-8 GHz cryogeni...
This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise ...
This PhD thesis presents the work that was done developing radioastronomy instrumentation. The first...
Abstract—This paper describes a method for designing cryo-genic silicon–germanium (SiGe) transistor ...
In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideban...
We have realized receiving - amplifying circuits for a frequency range of 21.0-23.0 GHz using freque...
The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic t...
In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermedia...
instrumentation activities, several low noise, low power consumption cryogenic amplifiers were devel...
Two packaged low noise amplifiers for the 0.3–4 GHz frequency range are described. The amplifiers ca...
MESFETS increasingly dominate the microwave amplifier field. The inherently low noise of the field e...
In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically des...
This paper demonstrates two designs of extremely low noise amplifiers in the low frequency range of ...
Monolithic (MMIC) and discrete transistor (MIC) low noise amplifiers are compared on the basis of pe...