Add to ORKGThe mixing of Ti, Cr, and Ni thin films with SiO_2 by low‐temperature (−196–25 °C) irradiation with 290 keV Xe has been investigated. Comparison of the morphology of the intermixed region and the dose dependences of net metal transport into SiO_2 reveals that long range motion and phase formation probably occur as separate and sequential processes. Kinetic limitations suppress chemical effects in these systems during the initial transport process. Chemical interactions influence the subsequent phase formation
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
The formation of Ni silicides has been successfully synthesized by ion beam mixing. Thin nickel film...
This article focuses on the influence of chemical driving forces on the mixing and phase formation t...
The mixing of Ti, Cr, and Ni thin films with SiO_2 by low‐temperature (−196–25 °C) irradiation with ...
The mechanisms of atomic transport induced by ion irradiation generally fall into the categories of ...
We have characterized the interaction of isotropic and anisotropic atomic transport mechanisms in th...
Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 a...
A significant improvement of the lateral uniformity of thermally formed Ni_(2)Si layers has been obs...
A significant improvement of the lateral uniformity of thermally formed Ni_(2)Si layers has been obs...
The formation of CrSi_2 by ion mixing was studied as a function of temperature, silicide thickness a...
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
The moving species during the formation of Pt2Si, Ni2Si, and CrSi2 by both ion mixing with 300–600 k...
The ion-induced intermixing of atoms between a thin metal film (Ni, Nb, Mo and Ti) and its silicon s...
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
The formation of Ni silicides has been successfully synthesized by ion beam mixing. Thin nickel film...
This article focuses on the influence of chemical driving forces on the mixing and phase formation t...
The mixing of Ti, Cr, and Ni thin films with SiO_2 by low‐temperature (−196–25 °C) irradiation with ...
The mechanisms of atomic transport induced by ion irradiation generally fall into the categories of ...
We have characterized the interaction of isotropic and anisotropic atomic transport mechanisms in th...
Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 a...
A significant improvement of the lateral uniformity of thermally formed Ni_(2)Si layers has been obs...
A significant improvement of the lateral uniformity of thermally formed Ni_(2)Si layers has been obs...
The formation of CrSi_2 by ion mixing was studied as a function of temperature, silicide thickness a...
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
The moving species during the formation of Pt2Si, Ni2Si, and CrSi2 by both ion mixing with 300–600 k...
The ion-induced intermixing of atoms between a thin metal film (Ni, Nb, Mo and Ti) and its silicon s...
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
The formation of Ni silicides has been successfully synthesized by ion beam mixing. Thin nickel film...
This article focuses on the influence of chemical driving forces on the mixing and phase formation t...