Comprehensive simulations of the processing plasmas used in semiconductor fabrication will depend on the availability of basic data for many microscopic processes that occur in the plasma and at the surface. Cross sections for electron collisions, a principal mechanism for producing reactive species in these plasmas, are among the most important such data; however, electron-collision cross sections are difficult to measure, and the available data are, at best, sketchy for the polyatomic feed gases of interest. While computational approaches to obtaining such data are thus potentially of significant value, studies of electron collisions with polyatomic gases at relevant energies are numerically intensive. In this article, we report on the pr...
Molecular electronic structure calculations involving unbound or scattering states occupy a small bu...
This paper summarizes the computational techniques behind a novel concurrent simulation method used ...
The article of record as published may be found at http://dx.doi.org/10.1063/1.168329It is shown tha...
Comprehensive simulations of the processing plasmas used in semiconductor fabrication will depend on...
In the plasmas used in semiconductor fabrication, collisions between electrons and polyatomic molecu...
In the plasmas used in semiconductor fabrication, collisions between electrons and polyatomic molecu...
In the plasmas used in semiconductor fabrication, collisions between electrons and polyatomic molecu...
Elastic electron scattering cross sections from 5–30 eV are reported for the molecules C_2H_4, C_2H_...
Elastic electron scattering cross sections from 5–30 eV are reported for the molecules C_2H_4, C_2H_...
Elastic electron scattering cross sections from 5-30 eV are reported for the molecules C2H4, C2H6, C...
Electron-molecule collisions, particularly those leading to dissociation of molecules and hence to p...
Electron-molecule collisions, particularly those leading to dissociation of molecules and hence to p...
We report on a distributed memory implementation and initial applications of a program for calculati...
We report on a distributed memory implementation and initial applications of a program for calculati...
Though most of the current knowledge of electron–molecule collisions derives from experiments, accur...
Molecular electronic structure calculations involving unbound or scattering states occupy a small bu...
This paper summarizes the computational techniques behind a novel concurrent simulation method used ...
The article of record as published may be found at http://dx.doi.org/10.1063/1.168329It is shown tha...
Comprehensive simulations of the processing plasmas used in semiconductor fabrication will depend on...
In the plasmas used in semiconductor fabrication, collisions between electrons and polyatomic molecu...
In the plasmas used in semiconductor fabrication, collisions between electrons and polyatomic molecu...
In the plasmas used in semiconductor fabrication, collisions between electrons and polyatomic molecu...
Elastic electron scattering cross sections from 5–30 eV are reported for the molecules C_2H_4, C_2H_...
Elastic electron scattering cross sections from 5–30 eV are reported for the molecules C_2H_4, C_2H_...
Elastic electron scattering cross sections from 5-30 eV are reported for the molecules C2H4, C2H6, C...
Electron-molecule collisions, particularly those leading to dissociation of molecules and hence to p...
Electron-molecule collisions, particularly those leading to dissociation of molecules and hence to p...
We report on a distributed memory implementation and initial applications of a program for calculati...
We report on a distributed memory implementation and initial applications of a program for calculati...
Though most of the current knowledge of electron–molecule collisions derives from experiments, accur...
Molecular electronic structure calculations involving unbound or scattering states occupy a small bu...
This paper summarizes the computational techniques behind a novel concurrent simulation method used ...
The article of record as published may be found at http://dx.doi.org/10.1063/1.168329It is shown tha...