GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for the first time. Output powers of 150 mW at 36.9 GHz with 24% efficiency and 300 mW at 24.8 GHz with 18% efficiency have been obtained. Peak efficiencies of 35% at output power levels near 100 mW have been achieved at both frequencies. Both K-band and Ka-band frequency doublers are derived from a lower power, single-diode design by series connection of two diodes and scaling to achieve different power and frequency specifications. Their fabrication was accomplished using the same process sequence
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is pr...
Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplie...
Design and test data for a full waveguide band MMIC tripler using anti-parallel Schottky diodes are ...
GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for t...
This paper reports on the recent development of monolithic frequency tripler array employing a back-...
A monolithic planar array containing thousands of GaAs Barrier-Intrinsic-N^+ diodes have produced on...
Monolithic diode grid were fabricated on 2-cm^2 gallium-arsenide wafers in a proof-of-principle test...
Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave h...
Harmonic power combining through a symmetric combiner network has the potential for extending the po...
The design and characterization of a 28-56 GHz frequency doubler based on a commercial foundry GaAs ...
In this thesis, a frequency doubler is designed to produce a broadband local oscillator signal (LO) ...
Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIR...
Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned ful...
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is pr...
Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplie...
Design and test data for a full waveguide band MMIC tripler using anti-parallel Schottky diodes are ...
GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for t...
This paper reports on the recent development of monolithic frequency tripler array employing a back-...
A monolithic planar array containing thousands of GaAs Barrier-Intrinsic-N^+ diodes have produced on...
Monolithic diode grid were fabricated on 2-cm^2 gallium-arsenide wafers in a proof-of-principle test...
Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave h...
Harmonic power combining through a symmetric combiner network has the potential for extending the po...
The design and characterization of a 28-56 GHz frequency doubler based on a commercial foundry GaAs ...
In this thesis, a frequency doubler is designed to produce a broadband local oscillator signal (LO) ...
Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIR...
Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned ful...
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is pr...
Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplie...
Design and test data for a full waveguide band MMIC tripler using anti-parallel Schottky diodes are ...