Add to ORKGThe interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP and InGaAsSb lasers. Good aggreement with experimental data was obtained for lasers with low nominal threshold current densities. These results demonstrate the importance of Auger recombination in the threshold characteristics of InGaAsP/InP lasers
The effects of energy-band structures on Auger recombination and its contribution to T//0 in GaInAsP...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum ...
The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate...
Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has be...
A model has been developed for CW operation of InGaAsP Double-heterostructure (DH) lasers considerin...
The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...
The band gap dependencies of the threshold current and its radiative component are measured using hi...
We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...
The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...
We investigated the influence of Auger recombination from 90 K to above room temperature and found i...
The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...
High pressure and spontaneous emission analysis techniques have been used to probe the recombination...
A quantum-design approach to reduce the Auger losses in two micron InGaSb type-I quantum well edge-e...
We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...
The effects of energy-band structures on Auger recombination and its contribution to T//0 in GaInAsP...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum ...
The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate...
Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has be...
A model has been developed for CW operation of InGaAsP Double-heterostructure (DH) lasers considerin...
The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...
The band gap dependencies of the threshold current and its radiative component are measured using hi...
We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...
The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...
We investigated the influence of Auger recombination from 90 K to above room temperature and found i...
The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...
High pressure and spontaneous emission analysis techniques have been used to probe the recombination...
A quantum-design approach to reduce the Auger losses in two micron InGaSb type-I quantum well edge-e...
We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...
The effects of energy-band structures on Auger recombination and its contribution to T//0 in GaInAsP...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum ...