The role of defects in heterojunctions was investigated. The density of such defects required to pin the Fermi level or to affect the band offset was estimated using simple electrostatic considerations. We conclude that it is very unlikely that defects play any role in determining the band offsets, but they might affect the Fermi-level position at the interface
We review in this paper the electronic properties of semiconductor heterojunctions. We focus on inte...
The variation of barrier height with the band gap in the metal/heterojunction systems is related to ...
The height of semiconductor heterojunction band offsets (band discontinuities) determines the feasab...
The role of defects in heterojunctions was investigated. The density of such defects required to pin...
Fermi-level pinning behavior has been observed at the free surface, oxide interface, metal interface...
In the present paper we discuss the electronic properties of semiconductor heterojunctions, focusing...
When two semiconductors are joined at a heterojunction, discontinuities occur in the valence bands a...
From the results of self-consistent calculations on semiconductor heterojunction structures it has b...
The use of surface-sensitive experimental techniques has produced in recent years important advances...
Heterojunction band lineups have been investigated for over 40 years, and still are one of the most ...
We have investigated the phenomenon of Fermi-level pinning by charged defects at the semiconductor-m...
Band offsets at semiconductor heterojunctions have been shown to be critically dependent on the inte...
The problem of whether band offsets at semiconductor interfaces are determined by bulk properties of...
A new model for band offsets in lattice-matched heterojunctions is presented along with a novel defi...
The technique of photoelectron spectroscopy has contributed tremendously to our knowledge on the pro...
We review in this paper the electronic properties of semiconductor heterojunctions. We focus on inte...
The variation of barrier height with the band gap in the metal/heterojunction systems is related to ...
The height of semiconductor heterojunction band offsets (band discontinuities) determines the feasab...
The role of defects in heterojunctions was investigated. The density of such defects required to pin...
Fermi-level pinning behavior has been observed at the free surface, oxide interface, metal interface...
In the present paper we discuss the electronic properties of semiconductor heterojunctions, focusing...
When two semiconductors are joined at a heterojunction, discontinuities occur in the valence bands a...
From the results of self-consistent calculations on semiconductor heterojunction structures it has b...
The use of surface-sensitive experimental techniques has produced in recent years important advances...
Heterojunction band lineups have been investigated for over 40 years, and still are one of the most ...
We have investigated the phenomenon of Fermi-level pinning by charged defects at the semiconductor-m...
Band offsets at semiconductor heterojunctions have been shown to be critically dependent on the inte...
The problem of whether band offsets at semiconductor interfaces are determined by bulk properties of...
A new model for band offsets in lattice-matched heterojunctions is presented along with a novel defi...
The technique of photoelectron spectroscopy has contributed tremendously to our knowledge on the pro...
We review in this paper the electronic properties of semiconductor heterojunctions. We focus on inte...
The variation of barrier height with the band gap in the metal/heterojunction systems is related to ...
The height of semiconductor heterojunction band offsets (band discontinuities) determines the feasab...